Dram comprising stacked-type capacitor having vertically protrud

Details Dram comprising stacked-type capacitor having vertically protrud Dram comprising stacked-type capacitor having vertically protrud

1992-03-13

1994-01-18

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Capacitors

361150, G11C 1300, G11C 1124

Patent

active

052804445

ABSTRACT:
A storage node of a stacked capacitor in a DRAM comprises a first part connected to a source/drain region and a second part protruding upward from a substrate in a vertical wall shape. The second part includes a concave part in the inner part which is removed by etching. Steps are formed on the inner and outer peripheral surfaces of the vertical wall part. The steps are formed by a self-alignment method using a sidewall insulating layer formed by anisotropic etching. Capacitance of the capacitor is increased by forming steps on the surface of the storage node.

REFERENCES:
patent: 5002896 (1991-03-01), Naruke

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