Dram comprising stacked-type capacitor having vertically protrud

Static information storage and retrieval – Systems using particular element – Capacitors

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

361150, G11C 1300, G11C 1124

Patent

active

052804445

ABSTRACT:
A storage node of a stacked capacitor in a DRAM comprises a first part connected to a source/drain region and a second part protruding upward from a substrate in a vertical wall shape. The second part includes a concave part in the inner part which is removed by etching. Steps are formed on the inner and outer peripheral surfaces of the vertical wall part. The steps are formed by a self-alignment method using a sidewall insulating layer formed by anisotropic etching. Capacitance of the capacitor is increased by forming steps on the surface of the storage node.

REFERENCES:
patent: 5002896 (1991-03-01), Naruke

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Dram comprising stacked-type capacitor having vertically protrud does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dram comprising stacked-type capacitor having vertically protrud, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dram comprising stacked-type capacitor having vertically protrud will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1140781

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.