DRAM cells and electronic systems

Details DRAM cells and electronic systems DRAM cells and electronic systems

2006-08-15

2006-08-15

Thomas, Eric W. (Department: 2831)

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

C361S305000, C257S301000

Reexamination Certificate

active

07092234

ABSTRACT:
The invention includes capacitor constructions which have a layer of aluminum oxide between a high-k dielectric material and a layer containing titanium and nitrogen. The layer containing titanium and nitrogen can be, for example, titanium nitride and/or boron-doped titanium nitride. The capacitor constructions can be incorporated into DRAM cells, which in turn can be incorporated into electronic systems. The invention also includes methods of forming capacitor constructions.

REFERENCES:
patent: 5418180 (1995-05-01), Brown
patent: 5874770 (1999-02-01), Saia et al.
patent: 6111319 (2000-08-01), Liou et al.
patent: 6150226 (2000-11-01), Reinberg
patent: 6207487 (2001-03-01), Kim et al.
patent: 6222722 (2001-04-01), Fukuzumi et al.
patent: 6255187 (2001-07-01), Horii
patent: 6314028 (2001-11-01), Kono
patent: 6320244 (2001-11-01), Alers et al.
patent: 6323096 (2001-11-01), Saia et al.
patent: 6335049 (2002-01-01), Basceri
patent: 6337237 (2002-01-01), Basceri et al.
patent: 6346454 (2002-02-01), Sung et al.
patent: 6350685 (2002-02-01), Asahina et al.
patent: 6387751 (2002-05-01), Tominaga
patent: 6446317 (2002-09-01), Figueroa et al.
patent: 6451646 (2002-09-01), Lu et al.
patent: 6452776 (2002-09-01), Chakravorty
patent: 6476432 (2002-11-01), Basceri et al.
patent: 6482736 (2002-11-01), Basceri et al.
patent: 6486022 (2002-11-01), Lee
patent: 6492241 (2002-12-01), Rhodes et al.
patent: 6511896 (2003-01-01), Basceri et al.
patent: 6534357 (2003-03-01), Basceri et al.
patent: 6558517 (2003-05-01), Basceri
patent: 6660580 (2003-12-01), Lee
patent: 6753618 (2004-06-01), Basceri et al.
patent: 6780704 (2004-08-01), Raaijmakers et al.
patent: 6881642 (2005-04-01), Basceri et al.
patent: 6893963 (2005-05-01), Chen
patent: 2002/0115252 (2002-08-01), Haukka et al.
patent: 2003/0003621 (2003-01-01), Rhodes et al.
patent: 2003/0017265 (2003-01-01), Basceri et al.
patent: 2003/0017266 (2003-01-01), Basceri et al.
patent: 2003/0025142 (2003-02-01), Rhodes et al.
patent: 2003/0045006 (2003-03-01), Basceri
patent: 2003/0052358 (2003-03-01), Weimer
patent: 2003/0096473 (2003-05-01), Shih et al.
patent: 2003/0129799 (2003-07-01), Nam et al.
patent: 2003/0168750 (2003-09-01), Basceri et al.
patent: 2003/0199139 (2003-10-01), Lee
patent: 2004/0113235 (2004-06-01), Coolbaugh et al.
U.S. Appl. No. 10/094,581, filed Mar. 6, 2002, Basceri et al.

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