DRAM Cell with trench capacitor and vertical channel in substrat

Details DRAM Cell with trench capacitor and vertical channel in substrat DRAM Cell with trench capacitor and vertical channel in substrat

1991-07-22

1993-05-04

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 68, H01L 2968, H01L 2702, H01L 2906

Patent

active

052086577

ABSTRACT:
A dRAM cell and array of cells, together with a method of fabrication, are disclosed wherein the cell includes one field effect transistor and one storage capacitor with the capacitor formed in a trench in a substrate and the transistor channel formed by epitaxial growth on the substrate. The transistor source and drain are insulated from the substrate, and the transistor may be adjacent the trench or on the upper portion of the trench sidewalls. Signal charge is stored on the capacitor plate insulated from the substrate.

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