DRAM cell with a roughened poly-Si electrode

Details DRAM cell with a roughened poly-Si electrode DRAM cell with a roughened poly-Si electrode

1996-12-03

1999-10-19

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438253, 438255, 438396, 438960, 438964, H01L 218242

Patent

active

059703601

ABSTRACT:
A porous silicon layer is created by using wet etching to etch a polysilicon layer. In preferred embodiment, the polysilicon layer is treated by H.sub.3 PO.sub.4 solution at 60-165.degree. C. for about 3-200 minutes. The porous silicon layer is subsequently treated by using a SC-1 solution at a temperature about 50-100.degree. C. for about 5-30 minutes to form a roughened polysilicon layer. The SC-1 solution is composed of NH.sub.4 OH, H.sub.2 O.sub.2 and H.sub.2 O. The volume ratio for the three compounds of said SC-1 is NH.sub.4 OH:H.sub.2 O.sub.2 :H.sub.2 O=0.1-5:0.1-5:1-20. The next step of the formation is the deposition of a dielectric film along the roughened surface of the micro-islands polysilicon layers. A conductive layer is deposited over the dielectric film. Next, photolithgraphy and etching process are used to etch the conductive layer, the dielectric film and the micro-islands polysilicon layer into a portion of the layer.

REFERENCES:
patent: 5494840 (1996-02-01), Ohmi
patent: 5583070 (1996-12-01), Liao et al.
patent: 5597754 (1997-01-01), Lou et al.
patent: 5597760 (1997-01-01), Hirota
patent: 5607874 (1997-03-01), Wang et al.
patent: 5637151 (1997-06-01), Schulz
patent: 5650351 (1997-07-01), Wu
patent: 5721153 (1998-02-01), Kim et al.
patent: 5849624 (1998-12-01), Fazan et al.

Affiliated with

Also associated with

Rating

DRAM cell with a roughened poly-Si electrode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with DRAM cell with a roughened poly-Si electrode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and DRAM cell with a roughened poly-Si electrode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2068584