DRAM cell, DRAM and method for fabricating the same

Static information storage and retrieval – Systems using particular element – Capacitors

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

365174, 257296, G11C 1124, G11C 1134, H01L 27108

Patent

active

059497050

ABSTRACT:
The DRAM cell includes a first transistor, a second transistor, and a capacitor. The first and second transistors each have a gate, a source, and a drain electrode. The gate electrode of the second transistor is connected to one of the source and drain electrodes of the first transistor, and a first electrode of the capacitor is connected to the gate electrode of the second transistor. Also, a second electrode of the capacitor is connected to one of the source and drain electrodes of the second transistor. One of the source and drain electrodes of the second transistor not connected to the second electrode of the capacitor is connected to the gate electrode of the second transistor. Accordingly, the second transistor is on when a logic value of "1" is stored in the gate thereof, and off when a logic value of `0` is stored in the gate thereof. A wordline is connected to the gate electrode of the first transistor, a bitline is connected to the one of the source and drain electrodes of the first transistor not connected to the gate of the second transistor, and a reading line is connected to the second electrode of the capacitor. By applying a voltage corresponding to a logic value to the bitline, and selectively turning on the writing wordline, the logic value on the bitline is stored in the gate electrode of the second transistor. During a reading operation, a reference voltage is applied to the bitline, and a reading voltage is applied to the reading wordline. Then, the first transistor is selectively turned on by applying a voltage to the writing wordline. Based on the fluctuation in the reference voltage applied to the bitline, the logic value stored in the gate of the second transistor is easily determined.

REFERENCES:
patent: 4677589 (1987-06-01), Haskell et al.
patent: 4763181 (1988-08-01), Tasch, Jr.
patent: 5146300 (1992-09-01), Hamamoto et al.
patent: 5375086 (1994-12-01), Wahlstrom
patent: 5526305 (1996-06-01), Levi
patent: 5790451 (1998-08-01), Jun
patent: 5801412 (1998-09-01), Tobita
patent: 5811848 (1998-09-01), Chao
patent: 5841690 (1998-11-01), Shibutani et al.
patent: 5856940 (1999-01-01), Rao

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

DRAM cell, DRAM and method for fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with DRAM cell, DRAM and method for fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and DRAM cell, DRAM and method for fabricating the same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1810887

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.