Dram cell and method

Details Dram cell and method Dram cell and method

1989-01-23

1990-04-10

Hille, Rolf

357 55, 357 41, H01L 2978, H01L 2906, H01L 2702

Patent

active

049165240

ABSTRACT:
The described embodiments of the present invention provide structures, and a method for fabricating those structures, which include a memory cell formed within a single trench. A trench is formed in the surface of a semiconductor substrate. The bottom portion of the trench is filled with polycrystalline silicon to form one plate of a storage capacitor. The substrate serves as the other plate of the capacitor. The remaining portion of the trench is then filled with an insulating material such as silicon dioxide. A pattern is then etched into the silicon dioxide when opens a portion of the sidewall and the top portion of the trench down to the polycrystalline capacitor plate. A contact is then formed between the polycrystalline capacitor plate and the substrate. Dopant atoms diffuse through the contact to form a source region on a sidewall of the trench. A gate insulator is formed by oxidation and a drain is formed at the surface of the trench adjacent to the mouth of the trench. Conductive material is then formed inside the open portion of the upper portion of the trench thereby forming a transistor connecting the upper plate of the storage capacitor to a drain region on the surface of the semiconductor substrate.

REFERENCES:
patent: 4240092 (1980-12-01), Kuo
patent: 4462040 (1984-07-01), Ho et al.
patent: 4649625 (1987-03-01), Lu
patent: 4651184 (1987-03-01), Malhi
patent: 4672410 (1987-06-01), Miura et al.
patent: 4673962 (1987-06-01), Chatterjee et al.
patent: 4683486 (1987-07-01), Chatterjee
patent: 4751558 (1988-06-01), Kenney

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