Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-03-26
1993-07-06
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257311, 257305, 257296, H01L 2968, H01L 2978, H01L 2992
Patent
active
052256979
ABSTRACT:
A dRAM cell and array of cells, together with a method of fabrication, are disclosed wherein the cell includes one field effect transistor and one storage capacitor with both the transistor and the capacitor formed in a trench in a substrate. The transistor source, channel and drain and one capacitor plate are formed essentially vertically in the bulk substrate sidewalls of the trench, and the gate and other capacitor plate are formed in two regions of material inserted into the trench and isolated from the bulk by an insulating layer. Signal charge is stored on the capacitor material inserted into the trench by an electrical connection of the bulk substrate source to the capacitor material through the insulating layer. In preferred embodiments word lines on the substrate surface connect to the upper of the inserted regions which forms the gate, and bit lines on the substrate surface form the drains. The trenches and cells are formed at the crossings of bit lines and word lines; the bit lines and the word lines form perpendicular sets of parallel lines.
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Malhi Satwinder S.
Pollack Gordon P.
Richardson William F.
Crane Sara W.
Havill Richard B.
James Andrew J.
Neerings Ronald O.
Sorensen Douglas A.
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