Dram-capacitor structure

Details Dram-capacitor structure Dram-capacitor structure

1997-06-20

1999-02-16

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257295, H01L 27108, H01L 2976, H01L 2994, H01L 31119

Patent

active

058723730

ABSTRACT:
A semiconductor device employable as a capacitor has a conductive pillar arranged in an opening produced in an insulator layer produced on a semiconductor substrate, the conductive pillar being connected with a conductive region of the semiconductor substrate and being surrounded by a dielectric cylinder which is further surrounded by a conductive cylinder which extends onto the surface of the semiconductor substrate, thereby allowing a capacity, regardless of the horizontal area of the semiconductor device. A semiconductor memory cell of the one transistor and one capacitor structure has a capacitor which has a conductive pillar arranged in an opening produced in an insulator layer produced on a semiconductor substrate, the conductive pillar being connected with a conductive region of the semiconductor substrate and being surrounded by a dielectric cylinder which is further surrounded by a conductive cylinder which extends onto the surface of the semiconductor substrate, whereby a large magnitude of integration is readily realized.

REFERENCES:
patent: 5126280 (1992-06-01), Chan et al.
patent: 5150279 (1992-09-01), Gonzalez et al.
patent: 5292677 (1994-03-01), Dennison

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