DRAM and SRAM memory cells with repressed memory

Details DRAM and SRAM memory cells with repressed memory DRAM and SRAM memory cells with repressed memory

1999-07-29

2000-10-31

Hoang, Huan

Static information storage and retrieval

Floating gate

Particular connection

365149, 365154, G11C 1400

Patent

active

061412481

ABSTRACT:
The transfer device of a typical DRAM cell is replaced with a transistor having an additional gate. The unique cell can be accessed as a typical DRAM cell by reading from or writing to a storage capacitor or as a nonvolatile memory by storing charges on the additional gate. Thus, a DRAM cell having a nonvolatile memory component within its cell is formed in a simple and cost effective manner. Transistors in a typical SRAM cell are also replaced by the transistors with the additional gate to form a SRAM cell having a nonvolatile component built within its cell.

REFERENCES:
patent: 4271487 (1981-06-01), Craycraft et al.
patent: 4333166 (1982-06-01), Edwards
patent: 4760556 (1988-07-01), Deguchi et al.
patent: 5042011 (1991-08-01), Casper et al.
patent: 5111427 (1992-05-01), Kobayashi et al.
patent: 5153853 (1992-10-01), Eby et al.
patent: 5280205 (1994-01-01), Green et al.
patent: 5399516 (1995-03-01), Bergendahl et al.
patent: 5418739 (1995-05-01), Takasugi
patent: 5424569 (1995-06-01), Prall
patent: 5488587 (1996-01-01), Fukumoto
patent: 5497494 (1996-03-01), Combs et al.
patent: 5619642 (1997-04-01), Nielson et al.
patent: 5627785 (1997-05-01), Gilliam et al.
patent: 5796670 (1998-08-01), Liu
patent: 5801401 (1998-09-01), Forbes
patent: 5852306 (1998-12-01), Forbes
patent: 5870327 (1999-02-01), Gitlin et al.
patent: 5880991 (1999-03-01), Hsu et al.
patent: 5986932 (1999-11-01), Ratnakumar et al.
patent: 6009011 (1999-12-01), Yamauchi
Dipert et al., "Flash Memory Goes Mainstream," IEEE SPECTRUM, Oct. 1993/vol. 30/Nov. 10, pp. 48-52.

Affiliated with

Also associated with

Rating

DRAM and SRAM memory cells with repressed memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with DRAM and SRAM memory cells with repressed memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and DRAM and SRAM memory cells with repressed memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2060756