DRAM and MROM cells with similar structure

Details DRAM and MROM cells with similar structure DRAM and MROM cells with similar structure

1994-10-03

1997-02-25

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, 365146, H01L 2978

Patent

active

056061935

ABSTRACT:
A semiconductor memory has a random access memory (DRAM) and a mask read only memory (MROM) formed on the same semiconductor substrate; each of the DRAM and MROM comprising a plurality of word lines, a plurality of bit lines and a plurality of memory cells: each of the memory cells included in the DRAM and the MROM comprising; a switching element including a source and drain regions and a gate electrode; a capacitance element formed of a lamination of an insulating film and a plate electrode subsequently laminated in this order; and a conductive parts connecting the switching element to the word lines, the bit lines, and a capacitance element; the MROM including a predetermined memory cell which lacks at least one part of the conductive parts.

REFERENCES:
patent: 4755864 (1988-07-01), Ariizumi

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