DRAM and method for partially refreshing memory cell array

Details DRAM and method for partially refreshing memory cell array DRAM and method for partially refreshing memory cell array

2006-07-12

2008-03-25

Le, Vu A. (Department: 2824)

Static information storage and retrieval

Read/write circuit

Data refresh

C365S205000

Reexamination Certificate

active

07349278

ABSTRACT:
A method of a partial array self-refresh (PASR) operation for a dynamic random-access memory (DRAM) device includes initiating a PASR mode; writing data into a first single cell of a twin cell and inverted data of the data into a second single cell of the twin cell, during a first refresh period of the PASR mode; and concurrently refreshing the first and second single cells that are included in the twin cell, during subsequent refresh periods of the PASR mode following the first refresh period. Embodiments according to the invention can extend the period of refresh operations by applying a PASR technique for a twin cell to a single cell and thereby reduce the power consumption of the refresh operations.

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