Drain triggered N-channel non-volatile memory

Details Drain triggered N-channel non-volatile memory Drain triggered N-channel non-volatile memory

1980-07-28

1986-09-09

Munson, Gene M.

Static information storage and retrieval

Systems using particular element

Semiconductive

357 235, 357 41, G11C 1140, H01L 2978, H01L 2702

Patent

active

046113088

ABSTRACT:
An electrically alterable non-volatile memory for storing information is described incorporating an array of memory elements comprising N-channel variable threshold field effect transistors having at times an N-channel extending from its source to a predetermined distance from its drain, means for writing information into the array and means for reading information from the array.

REFERENCES:
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patent: 3836894 (1974-09-01), Cricchi
patent: 3877055 (1975-04-01), Fisher et al.
patent: 3895360 (1975-07-01), Cricchi et al.
patent: 4019198 (1977-04-01), Endo et al.
patent: 4063267 (1977-12-01), Hsia
patent: 4090258 (1978-05-01), Cricchi
patent: 4138737 (1979-02-01), McCann
patent: 4193128 (1980-03-01), Brewer
Iyer "Protective Device for MOS Integrated Circuits" Proc. IEEE vol. 56 (7/68) pp. 1223-1224.

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