Drain extended PMOS transistors and methods for making the same

Details Drain extended PMOS transistors and methods for making the same Drain extended PMOS transistors and methods for making the same

2004-12-15

2008-12-23

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S334000, C257SE27100, C257SE27125, C257SE27112

Reexamination Certificate

active

07468537

ABSTRACT:
Semiconductor devices (102) and drain extended PMOS transistors (CT1a) are provided, as well as fabrication methods (202) therefor, in which a p-type separation region (130) is formed between an n-buried layer (108) and the transistor backgate (126) to increase breakdown voltage performance without increasing epitaxial thickness.

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