Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-12-04
2010-11-23
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S339000, C257SE29268, C438S197000, C438S296000
Reexamination Certificate
active
07838940
ABSTRACT:
A drain-extended field effect transistor includes a drain contact region and a drain extension region. The drain-extended field effect transistor further includes an electrostatic discharge protection region that is electrically connected between the drain contact region and the drain extension region to protect the drain-extended field effect transistor against electrostatic discharge. The electrostatic discharge protection region has a dopant concentration level such that in case of an electrostatic discharge event, a base push-out is prevented from reaching the drain contact region.
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Gossner Harald
Schneider Jens
Infineon - Technologies AG
Mandala Victor A
Slater & Matsil L.L.P.
Stowe Scott
LandOfFree
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