Drain-extended field effect transistor

Details Drain-extended field effect transistor Drain-extended field effect transistor

2007-12-04

2010-11-23

Mandala, Victor A (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S339000, C257SE29268, C438S197000, C438S296000

Reexamination Certificate

active

07838940

ABSTRACT:
A drain-extended field effect transistor includes a drain contact region and a drain extension region. The drain-extended field effect transistor further includes an electrostatic discharge protection region that is electrically connected between the drain contact region and the drain extension region to protect the drain-extended field effect transistor against electrostatic discharge. The electrostatic discharge protection region has a dopant concentration level such that in case of an electrostatic discharge event, a base push-out is prevented from reaching the drain contact region.

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