Downstream ammonia plasma passivation of GaAs

Details Downstream ammonia plasma passivation of GaAs Downstream ammonia plasma passivation of GaAs

1994-03-01

1995-11-07

Padgett, Marianne

Coating processes

Direct application of electrical, magnetic, wave, or...

Pretreatment of substrate or post-treatment of coated substrate

427562, 427573, 427575, 437228, 437234, B05D 306

Patent

active

054646642

ABSTRACT:
Applicants have discovered that gallium arsenide surfaces can be dry passivated without heating or ion bombardment by exposing them downstream to ammonia plasma formation. Specifically, a workpiece having exposed gallium arsenide surfaces is passivated by placing the workpiece in an evacuable chamber, evacuating in the chamber, generating an ammonia plasma removed from the immediate vicinity of the workpiece, and causing the plasma products to flow downstream into contact with the workpiece. Preferably the plasma gas pressure is 0.5 to 6.0 Torr, the substrate temperature is less than 100.degree. C. and the time of exposure is in excess of 5 min. The plasma should be generated at a location sufficiently removed from the workpiece that the workpiece surface is not bombarded with ions capable of damaging the surface (more than about 10 cm) and sufficiently close to the workpiece that reactive plasma products exist in the flow (within about 30 cm). The workpiece should also not be placed within line-of-sight of the plasma to avoid radiation (UV, visible and X-ray) induced damage. The result is fast, stable, room temperature passivation, compatible with clustered dry processing techniques for integrated circuit manufacture.

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