Doubly asymmetric double gate transistor structure

Details Doubly asymmetric double gate transistor structure Doubly asymmetric double gate transistor structure

2005-01-11

2005-01-11

Thompson, Craig A. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

06841834

ABSTRACT:
The present invention provides a double gated transistor and a method for forming the same that results in improved device performance and density. The preferred embodiment of the present invention provides a double gated transistor with asymmetric gate doping, where one of the double gates is doped degenerately n-type and the other degenerately p-type. By doping one of the gates n-type, and the other p-type, the threshold voltage of the resulting device is improved. Additionally, the preferred transistor design uses an asymmetric structure that results in reduced gate-to-drain and gate-to-source capacitance. In particular, dimensions of the weak gate, the gate that has a workfunction less attractive to the channel carriers, are reduced such that the weak gate does not overlap the source/drain regions of the transistor. In contrast the strong gate, the gate having a workfunction that causes the inversion layer to form adjacent to it, is formed to slightly overlap the source/drain regions. This asymmetric structure allows for the performance benefits of a double gate design without the increased capacitance that would normally result.

REFERENCES:
patent: 5273921 (1993-12-01), Neudeck et al.
patent: 5461250 (1995-10-01), Burghartz et al.
patent: 5633523 (1997-05-01), Kato
patent: 6030861 (2000-02-01), Liu
patent: 6320222 (2001-11-01), Forbes et al.
patent: 6432829 (2002-08-01), Muller et al.
patent: 6433609 (2002-08-01), Voldman
patent: 6275788 (1987-04-01), None
patent: 6310666 (1988-01-01), None
patent: 7202011 (1995-08-01), None
patent: 8037239 (1996-08-01), None
patent: 92236761 (1997-08-01), None
patent: 10012748 (1998-01-01), None
patent: 11233644 (1999-08-01), None

Affiliated with

Also associated with

Rating

Doubly asymmetric double gate transistor structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Doubly asymmetric double gate transistor structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Doubly asymmetric double gate transistor structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3426251