Double well substrate plate trench DRAM cell array

Details Double well substrate plate trench DRAM cell array Double well substrate plate trench DRAM cell array

1992-01-09

1993-10-05

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257305, 257549, H01L 2702, H01L 2978, H01L 2704

Patent

active

052508293

ABSTRACT:
A high density substrate plate DRAM cell memory device and process are described in which a buried well region is formed adjacent to deep trench capacitors such that the substrate region of DRAM transfer FETs can be electrically isolated from other FETs on a semiconductor substrate. The buried region is partially formed by ion implantation and diffusion to intersect the walls of the deep trenches.

REFERENCES:
patent: 4688063 (1987-08-01), Lu et al.
patent: 4794434 (1988-12-01), Pelley
patent: 4801988 (1989-01-01), Kenney
patent: 4829017 (1989-05-01), Malhi
patent: 4873560 (1989-10-01), Sunami et al.
patent: 4912054 (1990-03-01), Tomassetti
patent: 4918502 (1990-04-01), Kaga et al.
patent: 4944682 (1990-07-01), Cronin et al.
patent: 5079613 (1992-01-01), Sawada et al.
"Trench and Compact Structures for DRAMs" by P. Chatterjee et al, International Electron Devices Meeting 1986, Technical Digest paper 6.1, pp. 128-131.
"CMOS Semiconductor Memory Structural Modification to Allow Increased Memory Charge" Anonymous, IBM Technical Disclosure Bulletin, vol. 31, No. 11, Apr. 1989, pp. 162-165.
"A 45-ns 16Mb DRAM with Triple-Well Structure" by S. Fujii et al, IEEE Journal of Solid-State Circuits, vol. 24, No. 5, Oct. 1989, pp. 1170-1175.
"New Well Structure for Deep Sub-micron CMOS/BiCMOS Using Thin Epitaxy over Buried Layer and Trench Isolation" by Y. Okazaki et al, 1990 Symposium on VLSI Technology, Digest of Technical Papers, paper 6C-4, pp. 83-84.

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