Double trench for isolation of semiconductor devices

Details Double trench for isolation of semiconductor devices Double trench for isolation of semiconductor devices

2006-04-07

2010-02-23

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29258

Reexamination Certificate

active

07667270

ABSTRACT:
A semiconductor device has a substrate (50), a buried layer (55), an active area extending from a surface contact to the buried layer, an insulator (130) in a first trench extending towards the buried layer, to isolate the active area, and a second insulator (130) in a second deep trench and extending through the buried layer to isolate the buried layer and the active area from other parts of the substrate. This double trench can help reduce the area needed for the electrical isolation between the active device and the other devices. Such reduction in area can enable greater integration or more cells in a multi cell super-MOS device, and so improve performance parameters such as Ron. The double trench can be manufactured using a first mask to etch both trenches at the same time, and subsequently using a second mask to etch the second deep trench deeper.

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Masahito Kodama et al., “Temperature characteristics of a new 100V rated power MOSFET, VLMOS (Vertical LOCOS MOS)”, Proc. ISPSD, pp. 463-466, (2004).

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