Double trench for isolation of semiconductor devices

Details Double trench for isolation of semiconductor devices Double trench for isolation of semiconductor devices

2011-03-29

2011-03-29

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

C257S341000, C257S510000

Reexamination Certificate

active

07915155

ABSTRACT:
Semiconductor device has a substrate (50), a buried layer (55), an active area extending from a surface contact to the buried layer, an insulator (130) in a first trench extending towards the buried layer, to isolate the active area, and a second insulator (130) in a second deep trench and extending through the buried layer to isolate the buried layer and the active area from other pails of the substrate. This double trench can help reduce the area needed for the electrical isolation between the active device and the other devices. Such reduction in area can enable greater integration or more cells in a multi cell super-MOS device, and so improve performance parameters such as Ron. The double trench can be manufactured using a first mask to etch both trenches at the same time, and subsequently using a second mask to etch the second deep trench deeper.

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Search Report of British Patent Office related to British Patent Application No. GB 0507157.6, Jul. 27, 2005.

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