Double switching field effect transistor and method of manufactu

Details Double switching field effect transistor and method of manufactu Double switching field effect transistor and method of manufactu

1995-02-27

1996-03-19

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257350, 257401, 437 46, 437937, 437941, H01L 2136, H01L 2126

Patent

active

055005454

ABSTRACT:
A field effect transistor has been developed with one source and one drain but with two independent active regions. It is shown how a double switching characteristic can be obtained with this structure which is described along with a process for its manufacture.

REFERENCES:
patent: 4609407 (1986-09-01), Masao et al.
patent: 4651408 (1987-03-01), MacElwee et al.
patent: 4686758 (1987-08-01), Liu et al.
patent: 5315143 (1994-05-01), Tsuji
VLSI Technology (second edition) by S. M. Sze, pub. by McGraw-Hill in 1988, p. 127.

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