Double stair-like capacitor structure for a DRAM cell

Details Double stair-like capacitor structure for a DRAM cell Double stair-like capacitor structure for a DRAM cell

1997-10-31

2000-01-04

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257310, 257534, H01L 27108, H01L 2976

Patent

active

060112867

ABSTRACT:
The double-stair-like capacitor formed on a semiconductor substrate includes a first storage node having stair-like structures in cross section view to increase the area of the first storage node. A dielectric layer substantially conformally covers a surface of the first storage node. A second storage node having a surface substantially conformally contacts the dielectric layer.

REFERENCES:
patent: 5104821 (1992-04-01), Choi et al.
patent: 5459345 (1995-10-01), Okudaira et al.
patent: 5796138 (1998-08-01), Chao
M. Sakao et al., "A Capacitor-Over-Bit-Line (COB) Cell With a Hemispherical-Grain Storage Node for 64Mb Drams", Apr. 1990, IEEE.
H. Watanabe et al., "A New Cylindrical Capacitor Using Hemispherical Grained Si (HSG-Si) for 256Mb Drams", Apr. 1992, IEEE.

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