Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-07-01
2008-07-01
Lebentritt, Michael S. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257SE21561, C257SE21703
Reexamination Certificate
active
11351184
ABSTRACT:
A SOI MOSFET structure having a reduced step height between the various semiconductor layers without adversely affecting the junction capacitance of the semiconductor device formed on the uppermost semiconductor layer as well as a method of fabricating the same are provided. The structure of the present invention includes an elevated device region having at least one semiconductor device located on a second semiconductor layer. The elevated device region further includes a source/drain junction that extends from the second semiconductor layer down to a first buried insulator layer that is located on an upper surface of the semiconductor substrate. The structure also includes a recessed device region having at least one semiconductor device located atop a first semiconductor layer which is located on an upper surface of the first buried insulator. An isolation region separates the elevated device region from the recessed device region.
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Isaac Stanetta D
Lebentritt Michael S.
Scully Scott Murphy & Presser
Tuchman, Esq. Ido
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