Double-sided etching technique for semiconductor structure...

Semiconductor device manufacturing: process – Chemical etching – Combined with coating step

Reexamination Certificate

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C438S106000, C438S107000, C438S022000, C029S830000

Reexamination Certificate

active

07081412

ABSTRACT:
Double-sided etching techniques are disclosed for providing a semiconductor structure with one or more through-holes. The through-holes may be sealed hermetically such as by a feed-through metallization process. The feed-through metallization process may provide electrical contact to an opto-electronic or integrated circuit encapsulated in a package with the semiconductor structure used as a lid.

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