Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-01-19
2010-02-23
Nguyen, Dao H (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S301000, C257S305000, C257S306000, C257SE21149, C257SE21396, C257SE27092, C257SE27094, C257SE29346, C438S243000, C438S249000, C438S386000, C438S387000, C438S392000
Reexamination Certificate
active
07667258
ABSTRACT:
Double-sided container capacitors are formed using sacrificial layers. A sacrificial layer is formed within a recess in a structural layer. A lower electrode is formed within the recess. The sacrificial layer is removed to create a space to allow access to the sides of the structural layer. The structural layer is removed, creating an isolated lower electrode. The lower electrode can be covered with a capacitor dielectric and upper electrode to form a double-sided container capacitor.
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Hill Chris W.
Sandhu Gurtej S.
Shea Kevin R.
Torek Kevin J.
Knobbe Martens Olson & Bear LLP
Micro)n Technology, Inc.
Nguyen Dao H
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