Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-12-13
2005-12-13
Tsai, H. Jey (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S308000, C257S309000
Reexamination Certificate
active
06974993
ABSTRACT:
A method used to manufacture a semiconductor device comprises providing a first conductive container capacitor top plate layer and etching the first conductive container capacitor top plate layer to form a plurality of openings therein. Subsequently, a container capacitor bottom plate layer is formed within the plurality of openings in the top plate layer such that the bottom plate layer defines a plurality of openings. A second conductive container capacitor top plate layer is formed within the plurality of openings in the bottom plate layer. The first conductive container capacitor top plate layer is electrically coupled with the second conductive container capacitor top plate layer. The first and second conductive container capacitor top plate layers and the container capacitor bottom plate layer form a plurality of container capacitors. A structure resulting from the method is also disclosed.
REFERENCES:
patent: 6060355 (2000-05-01), Batra et al.
patent: 6133599 (2000-10-01), Sung et al.
patent: 6159818 (2000-12-01), Durcan et al.
Martin Kevin D.
Micro)n Technology, Inc.
Tsai H. Jey
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