Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing
Reexamination Certificate
2006-04-18
2006-04-18
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Flip-flop used for sensing
C365S207000, C365S185210
Reexamination Certificate
active
07031212
ABSTRACT:
The present invention relates to a sense amplifier for reading a memory cell, comprising a read node linked directly or indirectly to the memory cell, a first active branch connected to the read node, comprising means for supplying a read current at the read node, and a data output linked to one node of the first active branch at which a voltage representative of the conductivity state of the memory cell appears. According to the present invention, the sense amplifier comprises a second active branch connected to the read node, comprising means for supplying, at the read node, a current that is added to the current supplied by the first active branch, such that the voltage representative of the conductivity state of the memory cell remains substantially stable upon a current draw at the read node. Application particularly to reading non-volatile FLASH and EEPROM type memory cells.
REFERENCES:
patent: 5175705 (1992-12-01), Iwahashi
patent: 5748015 (1998-05-01), Tam
patent: 5886925 (1999-03-01), Campardo et al.
patent: 6501697 (2002-12-01), Perner et al.
patent: 6590804 (2003-07-01), Perner
patent: 2002/0000841 (2002-01-01), Rai et al.
Auduong Gene N.
de Guzman Dennis M.
Seed IP Law Group PLLC
LandOfFree
Double read stage sense amplifier does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Double read stage sense amplifier, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Double read stage sense amplifier will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3574401