Double mesh finfet

Details Double mesh finfet Double mesh finfet

2007-04-24

2008-11-18

Ngo, Ngan (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S401000, C257SE27013

Reexamination Certificate

active

07453125

ABSTRACT:
A multiple gate field-effect transistor is built from an overlapping mesh assembly. The assembly comprises a first layer comprising a semiconductor material formed into at least one fin, at least one source, and at least one drain. The first layer comprises a portion of a first mesh, electrically separated from the rest of the mesh. Similarly, a second layer is formed over the first layer and electrically isolated from the first layer, the second layer being electrically conductive and comprising a gate for the at least on fin of the transistor. The second layer comprises a portion of a second mesh offset from the first mesh and overlapping the first mesh, the second layer of the MuGFET device electrically separated from the rest of the second mesh.

REFERENCES:
patent: 6989308 (2006-01-01), Furukawa et al.
patent: 7013447 (2006-03-01), Mathew et al.
patent: 7015078 (2006-03-01), Xiang et al.

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