Double layer method for fabricating a rim type attenuating phase

Details Double layer method for fabricating a rim type attenuating phase Double layer method for fabricating a rim type attenuating phase

1997-10-23

1998-12-29

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430296, 430394, G03F 900

Patent

active

058539239

ABSTRACT:
A method of forming a rim type attenuating phase shifting mask which requires only one resist layer and one resist developing step using a single developing solution. A transparent mask substrate has a layer of attenuating phase shifting material, a layer of opaque material, and a layer of resist material formed thereon. The layer of resist is exposed to a first pattern using a first exposure dose and a second pattern using a second exposure dose. The first exposure dose is sufficient to expose the first pattern in the entire thickness of the layer of resist material. The second exposure dose is sufficient only to expose the second pattern in a top portion of the layer of resist material. The resist is developed and the first pattern is used to etch the first pattern in the layer of opaque material and the layer of attenuating phase shifting material. The resist is then partially etched using an O.sub.2 plasma etch leaving the second pattern in that part of the layer of resist which remains. The second pattern is then etched in the layer of opaque material and the remaining resist material is stripped.

REFERENCES:
patent: 5244759 (1993-09-01), Pierrat
patent: 5384219 (1995-01-01), Doe et al.
patent: 5532089 (1996-07-01), Adair et al.
patent: 5620817 (1997-04-01), Hsu et al.
Takahashi et al. "Primary Process in E-Beam and Laser Lithographies for Phase-Shift Mask Manufacturing", SPIE vol. 1674 Optical/Laser Microlithography V. 1992 pp. 216-229.
"ULSI Technology" by Chang et al. McGraw-Hill Companies, Inc., 1992 pp. 311-312, pp. 284-289.

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