Double Lambda diode memory cell

Details Double Lambda diode memory cell Double Lambda diode memory cell

1981-09-30

1983-03-15

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Negative resistance

365189, G11C 1300

Patent

active

043769861

ABSTRACT:
Disclosed is an improved static memory cell comprised of first and second conductive means for carrying respective bias voltages in the cell, a third conductive means for carrying an input/output voltage signal in the cell, and a Lambda diode coupled between the first and third conductive means for there providing a negative dynamic resistance whenever the input/output voltage signal is within a predetermined range between the bias voltages on the first and second conductive means, with the improvement being a voltage dependent resistance means coupled between the second and third conductive means for there providing a negative dynamic resistance in response to at least some of the input/output voltages within said range.

REFERENCES:
patent: 4143286 (1979-03-01), Kolke et al.

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