Double-junction filterless CMOS color imager cell

Details Double-junction filterless CMOS color imager cell Double-junction filterless CMOS color imager cell

2007-06-19

2007-06-19

Dang, Phuc T. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S048000

Reexamination Certificate

active

11499081

ABSTRACT:
A double-junction complimentary metal-oxide-semiconductor (CMOS) filterless color imager cell is provided. The imager cell is fabricated from a silicon-on-insulator (SOI) substrate including a silicon (Si) substrate, a silicon dioxide insulator overlying the substrate, and a Si top layer overlying the insulator. A photodiode set is formed in the SOI substrate, including a first and second photodiode formed as a double-junction structure in the Si substrate. A third photodiode is formed in the Si top layer. A (imager sensing) transistor set is formed in the top Si layer. The transistor set is connected to the photodiode set and detects an independent output signal for each photodiode. The transistor set may be an eight-transistor (8T), a nine-transistor (9T), or an eleven-transistor (11T) cell.

REFERENCES:
patent: 6476372 (2002-11-01), Merrill et al.
patent: 2003/0197114 (2003-10-01), Muesch et al.
K. M. Findlater, D. Renshaw, J. E. D. Hurwitz, R. K. Henderson, M. D. Purcell, S. G. Smith, and T. E. R. Bailey,“ A CMOS Image Sensor With a Double-Junction Active Pixel”. IEEE Trans. Ed 50, #1, pp. 32-42, Jan. 2003.
K.M.Findlatera, P.B.Denyerb, R.K.Hendersonb, J.E.D.Hurwitzb, J.M.Raynorb, D.Renshawa,“ Buried double junction pixel using green and magenta filters”.
K.M.Rindlaters, R.B.Denyerb, R.K.Hendersonb, J.E.D.Hurwitzb, J.M.Raynorb, D.Renshawa,“ Buried double junction pixel using green and magenta filters”, pp. 60-64, 1999.

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