Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-11-15
1994-12-06
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257336, 257344, 257408, 257404, 437 15, 437 29, 437 44, 437 45, H01L 2968, H01L 2104
Patent
active
053713940
ABSTRACT:
An NMOS transistor has a source and a drain composed of n+ type of semiconductor material. A substrate region composed of a p type of semiconductor material is disposed between the source and the drain. A gate region is disposed above the substrate region and between the source region and the drain region. A first implant region is disposed adjacent to the source region and the gate region. The first implant region is composed of p type of semiconductor material with a first doping concentration. A second implant region is disposed between the first implant region and the substrate. The second implant region is composed of p type of semiconductor material with a second doping concentration. The channel doping profile first and second implant regions is tailored to obtain the optimum internal electric field to maximize device transconductance, while simultaneously controlling the device threshold voltage and punch through characteristics.
REFERENCES:
patent: 4994904 (1991-02-01), Nakagawa et al.
Adler Steven J.
Ma Gordon C.
Pirastehfar Hassan
Atkins Robert D.
Motorola Inc.
Wojciechowicz Edward
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