Double-heterostructure semiconductor with mesa stripe waveguide

Details Double-heterostructure semiconductor with mesa stripe waveguide Double-heterostructure semiconductor with mesa stripe waveguide

1987-08-10

1989-02-28

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

048092878

ABSTRACT:
Disclosed herein is a double-heterostructure semiconductor laser which emits a laser beam in a visible light range at ambient temperature. An active layer serving as a light emission layer is sandwiched between first and second cladding layers. The first cladding layer comprises an n type InAlP, while the second cladding layer comprises a p type InAlP and has a mesa stripe shape having slanted side surfaces so as to define a light waveguide channel of the semiconductor laser. Current-blocking layers are formed to cover the slanted side surfaces of the second cladding layer. The current-blocking layers comprise GaAs which is a III-V group compound semiconductor different from the III-V group compound semiconductor (i.e., InAlP) comprised in the second cladding layer. The composition ratio of aluminum in the second cladding layer is set not to be less than 0.4, whereby a Shottky barrier serving to inhibit or suppress a current leak in the light waveguide channel of the semiconductor laser is formed between the second cladding layer and the current-blocking layers.

REFERENCES:
Jpn. Journal of Applied Physics, vol. 21, No. 12, pp. L731-L733; Dec. 1982, T. Suzuki et al., "MOCVD-Grown Al.sub.0.5 In.sub.0.5 P-GA.sub.0.5 In.sub.0.5 P Double Heterostructure Lasers Optically Pumped at 90 K".
Appl. Phys. Lett., vol. 45, No. 9, pp. 964-966; Nov. 1984; M. Ikeda et al., "Yellow-emitting AlGalnP double heterostructure laser diode at 77 K grown by atmospheric metalorganic chemical vapor deposition".
Appl. Phys. Lett. 48, No. 2, pp. 89-91; Jan. 1986, M. Ikeda et al., "Room-Temperature Continuous-Wave Operation of an AlGalnP Mesa Stripe Laser".

Affiliated with

Also associated with

Rating

Double-heterostructure semiconductor with mesa stripe waveguide does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Double-heterostructure semiconductor with mesa stripe waveguide, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Double-heterostructure semiconductor with mesa stripe waveguide will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1374694