Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Having heterojunction
Reexamination Certificate
2005-08-02
2005-08-02
Thomas, Tom (Department: 2815)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Having heterojunction
C438S312000, C438S318000, C438S343000, C438S349000, C438S738000, C438S739000
Reexamination Certificate
active
06924203
ABSTRACT:
A heterojunction bipolar transistor (HBT) device structure is provided which facilitates the reduction of the base-collector capacitance and a method for making the same. The base-collector capacitance is decreased by fabricating a base micro-bridge connecting a base contact to a base mesa on the HBT. The base micro-bridge is oriented along about one of 001, 010, 00{overscore (1)}, and 0{overscore (1)}0 direction to a major flat of the wafer. The HBT device employs a phosphorous based collector material. During removal of the phosphorous based collector material, the base layer is undercut forming the micro-bridge, successfully removing the collector and sub-collector material below the bridge due to the orientation of the micro-bridge. The removal of collector and sub-collector material reduces the base-collector junction area, and therefore reduce the base-collector junction capacitance.
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Gutierrez-Aitken Augusto
Leslie Gregory Scott
Sawdai Donald James
Northrop Grumman Corporation
Richards N. Drew
Tarolli, Sundheim Covell & Tummino L.L.P.
Thomas Tom
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