Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-11-05
1995-01-24
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257305, 257549, H01L 2978, H01L 2702, H01L 2704
Patent
active
053844742
ABSTRACT:
A high density substrate plate trench DRAM cell memory device and process are described in which a buried region is formed adjacent to deep trench capacitors such that the substrate region of DRAM transfer FETs can be electrically isolated from other FETs on a semiconductor substrate. The buried region is contacted along its perimeter by a reach through region to complete the isolation. The combined regions reduce charge loss due to better control of device parasitics.
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Park Jong W.
Voldman Steven H.
International Business Machines - Corporation
Munson Gene M.
Walter, Jr. Howard J.
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