Double-gate transistor with enhanced carrier mobility

Details Double-gate transistor with enhanced carrier mobility Double-gate transistor with enhanced carrier mobility

2005-12-13

2005-12-13

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S285000, C438S173000, C257S190000, C257S201000, C257S192000

Reexamination Certificate

active

06974733

ABSTRACT:
There is disclosed an apparatus including a straining substrate, a device over the substrate including a channel, wherein the straining substrate strains the device in a direction substantially perpendicular to a direction of current flow in the channel.

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Int'l Search Report mailed Aug. 18, 2004 in co-pending Int'l Application No. PCT/US03/40582, 8 pages.

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