Double gate transistor, method of manufacturing same, and...

Details Double gate transistor, method of manufacturing same, and... Double gate transistor, method of manufacturing same, and...

2006-06-23

2008-08-19

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S410000, C257S401000, C257S649000, C257SE29022

Reexamination Certificate

active

07414290

ABSTRACT:
A double gate transistor comprises a substrate (105, 905) and first and second electrically insulating layers (110, 910), (120, 920). The first and second electrically insulating layers form a fin (130, 930). A first gate dielectric (140,940) is at a first side (131, 931) of the fin and a second gate dielectric (150, 950) is at a second side (132, 932) of the fin. A first metal region (160, 960) is adjacent to the first gate dielectric and has a first surface (161, 961), and a second metal region (170, 970) is adjacent to the second gate dielectric and has a second surface (171, 971). The first electrically insulating layer has a third surface (111, 911), the second electrically insulating layer has a fourth surface (121, 921), and the first surface and the second surface lie between the third and fourth surfaces.

REFERENCES:
patent: 7053449 (2006-05-01), Segura et al.
patent: 7148526 (2006-12-01), An et al.
patent: 7165171 (2007-01-01), Zhang et al.
patent: 7271433 (2007-09-01), Forbes
patent: 2004/0222466 (2004-11-01), Fried et al.
patent: 2007/0075351 (2007-04-01), Schulz et al.
patent: 2007/0158756 (2007-07-01), Dreeskornfeld et al.

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