Double gate transistor for low power circuits

Details Double gate transistor for low power circuits Double gate transistor for low power circuits

2006-05-30

2006-05-30

Nadav, Ori (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S341000

Reexamination Certificate

active

07053449

ABSTRACT:
A double gate MOSFET having a control gate and a signal gate. The effective threshold voltage seen by the signal gate may be modified by charging the control gate. The effective threshold voltage may be increased in magnitude to reduce sub-threshold leakage current when the double gate MOSFET is inactive. When inactive, the control gate is maintained at a negative voltage for a double gate nMOSFET, and is maintained at a positive voltage for a double gate pMOSFET. When active, the control gate is charged to a voltage close to the threshold voltage, and then floated, so that a signal voltage applied to the signal gate may turn the double gate MOSFET ON during a signal voltage transition via the coupling capacitance between the signal and control gates.

REFERENCES:
patent: 5619454 (1997-04-01), Lee et al.
patent: 5627392 (1997-05-01), Diorio et al.
patent: 6115291 (2000-09-01), Lakhani
patent: 6122191 (2000-09-01), Hirose et al.
patent: 6462990 (2002-10-01), Keeney
patent: 6711065 (2004-03-01), Shum et al.
patent: 6768165 (2004-07-01), Eitan
Donald G. Fink and John M. Carroll, “Standard Handbook for Electrical Engineers,” McGraw Hill Book Co., New York (1968), p. 2-30.
Diorio, C. et al., “A Single-Transistor Silicon Synapse”, IEEE Transactions on Electron Devices, vol. 43, No. 11, pp. 1972-1980, Nov. 1996.
Diorio, C. et al., “Adaptive CMOS: From Biological Inspiration to Systems-on-a-Chip”, Proceedings of the IEEE, vol. 90, No. 3, pp. 345-357, Mar. 2002.
AMD Finds Way to Double Power, San Jose Mercury News, Sep. 11, 2002, Business Section, p. 1.

Affiliated with

Also associated with

Rating

Double gate transistor for low power circuits does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Double gate transistor for low power circuits, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Double gate transistor for low power circuits will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3642179