Double gate MOSFET transistor and method for the production...

Details Double gate MOSFET transistor and method for the production... Double gate MOSFET transistor and method for the production...

2005-03-08

2005-03-08

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S257000, C438S269000, C438S283000, C438S300000, C257S347000

Reexamination Certificate

active

06864129

ABSTRACT:
A double gate MOSFET transistor and a method for fabricating it are described. In this case, a semiconductor layer structure of a transistor channel to be formed is embedded in a spacer material and contact-connected by source and drain regions which are filled into depressions that are etched on opposite sides of the semiconductor layer structure. Afterwards, the spacer material is etched out selectively and replaced by the electrically conductive gate electrode material.

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