Double-gate MOS transistor, double-gate CMOS transistor, and...

Details Double-gate MOS transistor, double-gate CMOS transistor, and... Double-gate MOS transistor, double-gate CMOS transistor, and...

2005-04-05

2008-09-09

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S202000, C257S204000, C257S206000, C257S338000, C257S348000, C257S349000, C257S350000, C257S351000, C257S352000, C257S353000, C257S354000, C257S357000, C257S369000, C257S401000, C257S507000

Reexamination Certificate

active

07423324

ABSTRACT:
In a double-gate MOS transistor, a substrate, an insulating layer, and a semiconductor layer are formed or laminated in that order, an opening extending to the insulating layer is formed in the semiconductor layer while leaving an island-shaped region, the island-shaped region including a semiconductor crystal layer having a predetermined length and height and a predetermined shape of horizontal section, the semiconductor crystal layer including P-type or N-type source region, channel region, and drain region, in that order, formed therein, a source electrode, gate electrodes, and a drain electrode are provided in contact with side surfaces of the respective regions, and the gate electrodes are provided in contact with the side surfaces of the channel region.

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