Double gate GTO thyristor

Details Double gate GTO thyristor Double gate GTO thyristor

1991-05-13

1992-07-21

James, Andrew J.

357 39, 357 234, 357 55, 357 22, H01L 2974, H01L 29747, H01L 2980, H01L 2906

Patent

active

051327678

ABSTRACT:
There is disclosed a double gate GTO thyristor having a high gate gain and a high gate sensitivity, and capable of high speed turn-off. The double gate GTO thyristor comprises an anode/emitter layer, first and second base layers and cathode/emitter layer. A semiconductor layer having a conductivity type opposite to that of the anode/emitter layer is formed in the anode/emitter layer and located at a surface portion of the anode/emitter layer. A first gate electrode is connected to the first base layer, and a second gate electrode to the second base layer. An anode electrode is connected to the anode/emitter layer and all the surface of the semiconductor layer. A cathode electrode is connected to the cathode/emitter layer.

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High speed high voltage static Induction thyristor Y. Kajiwara, Y. Watakabe, M. Bessho, Y. Yakimoto and K. Shirehata.
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I.E.E.E. Transactions On Electron Devices; vol. ED-34, No. 6, Jun. 1987, pp. 1396-1406, New York, USA; J. I. Nishizawa et al; "A Double-Gate-Type Static-Induction Thyristor".

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