Method of making buried contact module with multiple poly si lay

Details Method of making buried contact module with multiple poly si lay Method of making buried contact module with multiple poly si lay

Filed on

1993-12-16

Date issued

1995-02-28

Examiner

Fourson, George

Patent Class

Fishing, trapping, and vermin destroying

Other Related Categories

437162, 148DIG35, H01L 21265, H01L 21225

Type

Patent

Status

active

Patent number

053936876

Description

ABSTRACT:
A new method of forming source/drain buried contact junctions is described. The method of forming a buried contact to a source/drain junction or other active device region in a silicon substrate is described. A first polysilicon layer is deposited over the surface of a silicon substrate. A second layer of polysilicon is deposited over the first layer of polysilicon wherein the polysilicon grain boundaries of the first and second polysilicon layers will be mismatched. The second polysilicon layer is doped. The grain boundary mismatch will slow the diffusion of the dopant into the silicon substrate. The dopant is driven in to form the buried contact with a shallow junction.

REFERENCES:
patent: 4407060 (1983-10-01), Sakurai
patent: 4945070 (1990-07-01), Hsu
patent: 4950617 (1990-08-01), Kumagai et al.
patent: 4978629 (1990-12-01), Komori et al.
patent: 5030584 (1991-07-01), Nakata
patent: 5049514 (1991-09-01), Mori
patent: 5323022 (1994-06-01), Glass et al.

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