Double gate (DG) SOI ratioed logic with intrinsically on...

Details Double gate (DG) SOI ratioed logic with intrinsically on... Double gate (DG) SOI ratioed logic with intrinsically on...

2007-02-20

2007-02-20

Owens, Douglas W. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S369000, C361S245000

Reexamination Certificate

active

10951695

ABSTRACT:
Disclosed is a Silicon-On-Insulator (SOI) Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) logic family composed of ratioed logic with intrinsically “on” symmetric fully depleted double-gate (DG) SOI MOSFET load(s) and asymmetric fully depleted double gate MOSFET driver(s).

REFERENCES:
patent: 2006/0012405 (2006-01-01), Martins

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