Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-06-27
2006-06-27
Owens, Douglas W. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S327000
Reexamination Certificate
active
07067868
ABSTRACT:
A semiconductor device (10) is formed by positioning a gate (22) overlying a semiconductor layer (16) of preferably silicon. A semiconductor material (26) of, for example only, SiGe or Ge, is formed adjacent the gate over the semiconductor layer and over source/drain regions. A thermal process diffuses the stressor material into the semiconductor layer. Lateral diffusion occurs to cause the formation of a strained channel (17) in which a stressor material layer (30) is immediately adjacent the strained channel. Extension implants create source and drain implants from a first portion of the stressor material layer. A second portion of the stressor material layer remains in the channel between the strained channel and the source and drain implants. A heterojunction is therefore formed in the strained channel. In another form, oxidation of the stressor material occurs rather than extension implants to form the strained channel.
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Barr Alexander L.
Kolagunta Venkat R.
Nguyen Bich-Yen
Sadaka Mariam G.
Thean Voon-Yew
Balconi-Lamic Michael J.
Freescale Semiconductor Inc.
King Robert L.
Owens Douglas W.
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