Double epitaxial method of fabricating semiconductor devices on

Details Double epitaxial method of fabricating semiconductor devices on Double epitaxial method of fabricating semiconductor devices on

1987-09-02

1990-01-30

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG12, 148DIG35, 148DIG135, 148 334, 156644, 156662, 357 49, 437 31, 437 62, 437 67, 437 81, 437 86, 437974, H01L 21265, H01L 2176

Patent

active

048973629

ABSTRACT:
A method of forming a high-quality complementary transistor device using bonded wafer technology. The invention includes bonding a handle wafer to a first epitaxial layer and then providing dopants to form the respective N and P buried layers in said first epitaxial layer. A second epitaxial layer is then deposited over the buried layers to provide the device forming regions for the respective transistor devices.

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