Double diffusion MOSFET with N+ and P+ type regions at an...

Details Double diffusion MOSFET with N+ and P+ type regions at an... Double diffusion MOSFET with N+ and P+ type regions at an...

2005-07-05

2005-07-05

Loke, Steven (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S409000, C257S492000, C257S493000

Reexamination Certificate

active

06914298

ABSTRACT:
A double diffusion MOSFET is disclosed which comprises: a drain region13of an N-type semiconductor layer formed on a semiconductor substrate11; a body region15of a P-type semiconductor region formed in the drain region13; an N-type source region16formed in the body region15; and a gate electrode21formed on a surface of the body region15, wherein the drain region13contains N+ type drain contact regions18and P+ type regions19such that those are put at an equal potential.

REFERENCES:
patent: 5155562 (1992-10-01), Tsuchiya
patent: 5168333 (1992-12-01), Nakagawa et al.
patent: 0 361 589 (1990-04-01), None
patent: 1 130 652 (2001-09-01), None

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