Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-02-13
2008-11-18
Wilson, Allan R. (Department: 8888)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S412000
Reexamination Certificate
active
07453127
ABSTRACT:
A double-diffused-drain metal-oxide-semiconductor device has a gate structure overlying a semiconductor substrate, a pair of insulator spacers on the sidewalls of the gate structure respectively, and a pair of floating non-insulator spacers embedded in the pair of insulator spacers respectively.
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patent: 2004/0038461 (2004-02-01), Lee et al.
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“Simple Gate-to-Drain Overlapped MOSFET's Using Poly Spacers for High Immunity to Channel Hot-Electron Degradation” Chen et al.; 1990; pp. 78-81.
“A Sub-Half Micron Partially Gate-to-Drain Overlapped MOSFET Optimized for High Performance and Reliability” Chen et al.; 1991; pp. 545-548.
TW Office Action mailed Apr. 2, 2008.
Chen Hung-Lin
Hung Feng-Chi
Lee Shih-Chin
Wu Hua-Shu
Taiwan Semiconductor Manufacturing Co. Ltd.
Thomas Kayden Horstemeyer & Risley
Wilson Allan R.
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