Double density non-volatile memory cells

Details Double density non-volatile memory cells Double density non-volatile memory cells

1998-07-07

2000-09-12

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257314, 257316, H01L 2976, H01L 2988

Patent

active

061181471

ABSTRACT:
Double density non-volatile memory cells having a trench structure are formed in a substrate, thereby facilitating miniaturization, improved planarization and low power programming and erasing. Each double density cell comprises two floating gates and a common control gate. Each pair of double density cells shares a common source region. Embodiments include forming first and second trenches in a substrate and depositing a tunnel dielectric layer in each trench. Polycrystalline silicon is then deposited filling each trench and a hole is etched forming two floating gate electrodes in each trench. An interpoly dielectric layer is then formed and a substantially T-shaped control gate electrode is deposited filling the hole between the floating gates and extending on the substrate.

REFERENCES:
patent: 4868619 (1989-09-01), Mukherjee
patent: 5049956 (1991-09-01), Yoshida et al.
patent: 5053839 (1991-10-01), Esquivel et al.
patent: 5338953 (1994-08-01), Wake
patent: 5386132 (1995-01-01), Wong

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