Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-11-25
2010-10-26
Le, Thao P. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S003000
Reexamination Certificate
active
07821048
ABSTRACT:
The semiconductor industry seeks to replace traditional volatile memory devices with improved non-volatile memory devices. The increased demand for a significantly advanced, efficient, and non-volatile data retention technique has driven the development of integrated magnetic memory structures. In one aspect, the present teachings relate to magnetic memory structure fabrication techniques in a high density configuration that includes an efficient means for programming high density magnetic memory structures.
REFERENCES:
patent: 3696349 (1972-10-01), Kaske et al.
patent: 6226197 (2001-05-01), Nishimura
patent: 6473328 (2002-10-01), Mercaldi
patent: 6483736 (2002-11-01), Johnson et al.
patent: 6750069 (2004-06-01), Durcan et al.
patent: 6927073 (2005-08-01), Huggins
patent: 7020004 (2006-03-01), Hurst et al.
patent: 7029926 (2006-04-01), Hurst et al.
patent: 7459739 (2008-12-01), Hurst et al.
patent: 2003/0206465 (2003-11-01), Muller et al.
patent: 2003/0223292 (2003-12-01), Nejad et al.
patent: 2004/0004889 (2004-01-01), Asao et al.
patent: 2004/0032010 (2004-02-01), Kools et al.
Gadbois Jason B.
Hurst Allan T.
Sather Jeffrey
Knobbe Martens Olson & Bear LLP
Le Thao P.
Micro)n Technology, Inc.
LandOfFree
Double density MRAM with planar processing does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Double density MRAM with planar processing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Double density MRAM with planar processing will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4193592