Double density MRAM with planar processing

Details Double density MRAM with planar processing Double density MRAM with planar processing

2006-04-10

2008-12-02

Le, Thao P. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C365S130000, C257SE21665, C438S003000

Reexamination Certificate

active

07459739

ABSTRACT:
The semiconductor industry seeks to replace traditional volatile memory devices with improved non-volatile memory devices. The increased demand for a significantly advanced, efficient, and non-volatile data retention technique has driven the development of integrated magnetic memory structures. In one aspect, the present teachings relate to magnetic memory structure fabrication techniques in a high density configuration that includes an efficient means for programming high density magnetic memory structures.

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