Double-decker MRAM cells with scissor-state angled reference...

Details Double-decker MRAM cells with scissor-state angled reference... Double-decker MRAM cells with scissor-state angled reference...

2006-08-29

2006-08-29

Le, Vu A. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000

Reexamination Certificate

active

07099186

ABSTRACT:
A double-decker MRAM cell is provided, including a stacked structure of first and second magnetic tunnel junctions. Each magnetic tunnel junction includes free and fixed magnetic regions made of magnetic material separated by a tunneling barrier layer made of non-magnetic material. The fixed magnetic regions are pinned by at least one pinning layer made of the same antiferromagnetic material such that in applying an external magnetic field fixed magnetizations are brought into a scissored configuration.

REFERENCES:
patent: 6385082 (2002-05-01), Abraham et al.
patent: 6667897 (2003-12-01), Abraham et al.
patent: 6754097 (2004-06-01), Sharma et al.
patent: 2004/0042263 (2004-03-01), Sharma et al.
Cullity, B.D., “Introduction to Magnetic Materials,” Addison-Wesley, pp. 238-240 (1972).

Affiliated with

Also associated with

Rating

Double-decker MRAM cells with scissor-state angled reference... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Double-decker MRAM cells with scissor-state angled reference..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Double-decker MRAM cells with scissor-state angled reference... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3667830